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用静压光致发光研究GaAs/AlAs超短周期超晶格导带最低能级的特性
李国华; 刘振先; 韩和相; 汪兆平; 汪德生; Ploog K
1992
Source Publication半导体学报
Volume13Issue:5Pages:322
metadata_83中科院半导体所;Max-planck Institute Fur Festkorperforschung
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:168644
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20235
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国华,刘振先,韩和相,等. 用静压光致发光研究GaAs/AlAs超短周期超晶格导带最低能级的特性[J]. 半导体学报,1992,13(5):322.
APA 李国华,刘振先,韩和相,汪兆平,汪德生,&Ploog K.(1992).用静压光致发光研究GaAs/AlAs超短周期超晶格导带最低能级的特性.半导体学报,13(5),322.
MLA 李国华,et al."用静压光致发光研究GaAs/AlAs超短周期超晶格导带最低能级的特性".半导体学报 13.5(1992):322.
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