SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs量子阱在电场作用下光电流谱的研究
江德生; 刘大欣; 张耀辉; 段海龙; 吴荣汉
1992
Source Publication半导体学报
Volume13Issue:6Pages:333
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:168646
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20233
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
江德生,刘大欣,张耀辉,等. GaAs/GaAlAs量子阱在电场作用下光电流谱的研究[J]. 半导体学报,1992,13(6):333.
APA 江德生,刘大欣,张耀辉,段海龙,&吴荣汉.(1992).GaAs/GaAlAs量子阱在电场作用下光电流谱的研究.半导体学报,13(6),333.
MLA 江德生,et al."GaAs/GaAlAs量子阱在电场作用下光电流谱的研究".半导体学报 13.6(1992):333.
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