GaAs/GaAlAs量子阱在电场作用下光电流谱的研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	GaAs/GaAlAs量子阱在电场作用下光电流谱的研究
	江德生; 刘大欣; 张耀辉; 段海龙; 吴荣汉
	1992
Source Publication	半导体学报
Volume	13 Issue:6 Pages:333
metadata_83	中科院半导体所
Subject Area	光电子学
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:168646
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20233
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	江德生,刘大欣,张耀辉,等. GaAs/GaAlAs量子阱在电场作用下光电流谱的研究[J]. 半导体学报,1992,13(6):333.
APA	江德生,刘大欣,张耀辉,段海龙,&吴荣汉.(1992).GaAs/GaAlAs量子阱在电场作用下光电流谱的研究.半导体学报,13(6),333.
MLA	江德生,et al."GaAs/GaAlAs量子阱在电场作用下光电流谱的研究".半导体学报 13.6(1992):333.

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