SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
低阈值InGaAs-GaAs应变层多量子阱激光器
肖建伟; 徐俊英; 杨国文; 徐遵图; 张敬明; 陈良惠; 周小川; 蒋健; 钟战天
1992
Source Publication半导体学报
Volume13Issue:4Pages:258
metadata_83中科院半导体所;中科院物理所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:168658
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20229
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
肖建伟,徐俊英,杨国文,等. 低阈值InGaAs-GaAs应变层多量子阱激光器[J]. 半导体学报,1992,13(4):258.
APA 肖建伟.,徐俊英.,杨国文.,徐遵图.,张敬明.,...&钟战天.(1992).低阈值InGaAs-GaAs应变层多量子阱激光器.半导体学报,13(4),258.
MLA 肖建伟,et al."低阈值InGaAs-GaAs应变层多量子阱激光器".半导体学报 13.4(1992):258.
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