低阈值InGaAs-GaAs应变层多量子阱激光器

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	低阈值InGaAs-GaAs应变层多量子阱激光器
	肖建伟; 徐俊英; 杨国文; 徐遵图; 张敬明; 陈良惠; 周小川; 蒋健; 钟战天
	1992
Source Publication	半导体学报
Volume	13 Issue:4 Pages:258
metadata_83	中科院半导体所;中科院物理所
Subject Area	半导体器件
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:168658
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20229
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	肖建伟,徐俊英,杨国文,等. 低阈值InGaAs-GaAs应变层多量子阱激光器[J]. 半导体学报,1992,13(4):258.
APA	肖建伟.,徐俊英.,杨国文.,徐遵图.,张敬明.,...&钟战天.(1992).低阈值InGaAs-GaAs应变层多量子阱激光器.半导体学报,13(4),258.
MLA	肖建伟,et al."低阈值InGaAs-GaAs应变层多量子阱激光器".半导体学报 13.4(1992):258.

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