SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InxGa(1-x)As/GaAs应变超晶格的电子结构
范卫军; 夏建白
1992
Source Publication半导体学报
Volume13Issue:3Pages:133
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20225
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范卫军,夏建白. InxGa(1-x)As/GaAs应变超晶格的电子结构[J]. 半导体学报,1992,13(3):133.
APA 范卫军,&夏建白.(1992).InxGa(1-x)As/GaAs应变超晶格的电子结构.半导体学报,13(3),133.
MLA 范卫军,et al."InxGa(1-x)As/GaAs应变超晶格的电子结构".半导体学报 13.3(1992):133.
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