Knowledge Management System Of Institute of Semiconductors,CAS
InxGa(1-x)As/GaAs应变超晶格的电子结构 | |
范卫军; 夏建白 | |
1992 | |
Source Publication | 半导体学报
![]() |
Volume | 13Issue:3Pages:133 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20225 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 范卫军,夏建白. InxGa(1-x)As/GaAs应变超晶格的电子结构[J]. 半导体学报,1992,13(3):133. |
APA | 范卫军,&夏建白.(1992).InxGa(1-x)As/GaAs应变超晶格的电子结构.半导体学报,13(3),133. |
MLA | 范卫军,et al."InxGa(1-x)As/GaAs应变超晶格的电子结构".半导体学报 13.3(1992):133. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
6220.pdf(203KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment