O2在FeSi（100）表面的初始吸附研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	O2在FeSi（100）表面的初始吸附研究
	丁孙安; 许振嘉
	1992
Source Publication	半导体学报
Volume	13 Issue:3 Pages:147
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20223
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	丁孙安,许振嘉. O2在FeSi（100）表面的初始吸附研究[J]. 半导体学报,1992,13(3):147.
APA	丁孙安,&许振嘉.(1992).O2在FeSi（100）表面的初始吸附研究.半导体学报,13(3),147.
MLA	丁孙安,et al."O2在FeSi（100）表面的初始吸附研究".半导体学报 13.3(1992):147.

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