SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
O2在FeSi(100)表面的初始吸附研究
丁孙安; 许振嘉
1992
Source Publication半导体学报
Volume13Issue:3Pages:147
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20223
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
丁孙安,许振嘉. O2在FeSi(100)表面的初始吸附研究[J]. 半导体学报,1992,13(3):147.
APA 丁孙安,&许振嘉.(1992).O2在FeSi(100)表面的初始吸附研究.半导体学报,13(3),147.
MLA 丁孙安,et al."O2在FeSi(100)表面的初始吸附研究".半导体学报 13.3(1992):147.
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