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MOCVD生长的硅衬底上GaAlAs/GaAs单量子阱和多量子阱激光器深能级研究
卢励吾; 周洁; 庄婉如; 梅野正义
1992
Source Publication半导体学报
Volume13Issue:3Pages:155
metadata_83中科院半导体所;日本名古屋工业大学
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:168666
Date Available2010-11-23
Citation statistics
Cited Times:8[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20221
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,周洁,庄婉如,等. MOCVD生长的硅衬底上GaAlAs/GaAs单量子阱和多量子阱激光器深能级研究[J]. 半导体学报,1992,13(3):155.
APA 卢励吾,周洁,庄婉如,&梅野正义.(1992).MOCVD生长的硅衬底上GaAlAs/GaAs单量子阱和多量子阱激光器深能级研究.半导体学报,13(3),155.
MLA 卢励吾,et al."MOCVD生长的硅衬底上GaAlAs/GaAs单量子阱和多量子阱激光器深能级研究".半导体学报 13.3(1992):155.
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