SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅中与钼有关能级的研究
周洁; 卢励吾; 韩志勇; 吴汲安
1992
Source Publication半导体学报
Volume13Issue:1Pages:8
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:168717
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20209
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周洁,卢励吾,韩志勇,等. 硅中与钼有关能级的研究[J]. 半导体学报,1992,13(1):8.
APA 周洁,卢励吾,韩志勇,&吴汲安.(1992).硅中与钼有关能级的研究.半导体学报,13(1),8.
MLA 周洁,et al."硅中与钼有关能级的研究".半导体学报 13.1(1992):8.
Files in This Item:
File Name/Size DocType Version Access License
6212.pdf(176KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[周洁]'s Articles
[卢励吾]'s Articles
[韩志勇]'s Articles
Baidu academic
Similar articles in Baidu academic
[周洁]'s Articles
[卢励吾]'s Articles
[韩志勇]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[周洁]'s Articles
[卢励吾]'s Articles
[韩志勇]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.