硅中与钼有关能级的研究

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	硅中与钼有关能级的研究
	周洁; 卢励吾; 韩志勇; 吴汲安
	1992
Source Publication	半导体学报
Volume	13 Issue:1 Pages:8
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:168717
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/20209
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	周洁,卢励吾,韩志勇,等. 硅中与钼有关能级的研究[J]. 半导体学报,1992,13(1):8.
APA	周洁,卢励吾,韩志勇,&吴汲安.(1992).硅中与钼有关能级的研究.半导体学报,13(1),8.
MLA	周洁,et al."硅中与钼有关能级的研究".半导体学报 13.1(1992):8.

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