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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
硅中与钼有关能级的研究
周洁; 卢励吾; 韩志勇; 吴汲安
1992
Source Publication半导体学报
Volume13Issue:1Pages:8
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:168717
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20209
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 周洁,卢励吾,韩志勇,等. 硅中与钼有关能级的研究[J]. 半导体学报,1992,13(1):8.
APA 周洁,卢励吾,韩志勇,&吴汲安.(1992).硅中与钼有关能级的研究.半导体学报,13(1),8.
MLA 周洁,et al."硅中与钼有关能级的研究".半导体学报 13.1(1992):8.
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