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MOVPE生长不掺杂薄GaAs层线偏振光吸收系数和折射率的电流感生变化
王德煌; 王威礼; 李桂棠; 段树坤
1992
Source Publication北京大学学报. 自然科学版
Volume28Issue:1Pages:96
metadata_83北京大学;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:168845
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20207
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王德煌,王威礼,李桂棠,等. MOVPE生长不掺杂薄GaAs层线偏振光吸收系数和折射率的电流感生变化[J]. 北京大学学报. 自然科学版,1992,28(1):96.
APA 王德煌,王威礼,李桂棠,&段树坤.(1992).MOVPE生长不掺杂薄GaAs层线偏振光吸收系数和折射率的电流感生变化.北京大学学报. 自然科学版,28(1),96.
MLA 王德煌,et al."MOVPE生长不掺杂薄GaAs层线偏振光吸收系数和折射率的电流感生变化".北京大学学报. 自然科学版 28.1(1992):96.
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