SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
BF+对(29)Si+注入GaAs层的影响
李国辉; 韩德俊; 陈如意; 罗晏; 刘伊犁; 姬成周; 宋红清; 王策寰
1992
Source Publication北京师范大学学报. 自然科学版
Volume28Issue:4Pages:478
metadata_83北京师范大学;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:169325
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20205
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李国辉,韩德俊,陈如意,等. BF+对(29)Si+注入GaAs层的影响[J]. 北京师范大学学报. 自然科学版,1992,28(4):478.
APA 李国辉.,韩德俊.,陈如意.,罗晏.,刘伊犁.,...&王策寰.(1992).BF+对(29)Si+注入GaAs层的影响.北京师范大学学报. 自然科学版,28(4),478.
MLA 李国辉,et al."BF+对(29)Si+注入GaAs层的影响".北京师范大学学报. 自然科学版 28.4(1992):478.
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