SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
P2S5/NH4OH处理GaAs(100)表面的电子能谱研究
钟战天; 罗文哲; 牟善明; 张开颜; 李侠; 李承芳
1992
Source Publication物理学报
Volume41Issue:4Pages:683
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20175
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
钟战天,罗文哲,牟善明,等. P2S5/NH4OH处理GaAs(100)表面的电子能谱研究[J]. 物理学报,1992,41(4):683.
APA 钟战天,罗文哲,牟善明,张开颜,李侠,&李承芳.(1992).P2S5/NH4OH处理GaAs(100)表面的电子能谱研究.物理学报,41(4),683.
MLA 钟战天,et al."P2S5/NH4OH处理GaAs(100)表面的电子能谱研究".物理学报 41.4(1992):683.
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