SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(113)表面原子结构的低能电子衍射研究
邢益荣; 吴汲安; 张敬平; 刘赤子; 王昌衡
1992
Source Publication物理学报
Volume41Issue:11Pages:1806
metadata_83中科院半导体所;中科院物理所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:187094
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20167
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邢益荣,吴汲安,张敬平,等. Si(113)表面原子结构的低能电子衍射研究[J]. 物理学报,1992,41(11):1806.
APA 邢益荣,吴汲安,张敬平,刘赤子,&王昌衡.(1992).Si(113)表面原子结构的低能电子衍射研究.物理学报,41(11),1806.
MLA 邢益荣,et al."Si(113)表面原子结构的低能电子衍射研究".物理学报 41.11(1992):1806.
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