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Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations
Wang Jianqing; Gu Zongquan; Li Mingfu; Lai Wuyan
1993
Source PublicationCommunications in Theoretical Physics
Volume20Issue:2Pages:159
metadata_83中科院半导体所;中科院物理所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:198455
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20153
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Jianqing,Gu Zongquan,Li Mingfu,et al. Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations[J]. Communications in Theoretical Physics,1993,20(2):159.
APA Wang Jianqing,Gu Zongquan,Li Mingfu,&Lai Wuyan.(1993).Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations.Communications in Theoretical Physics,20(2),159.
MLA Wang Jianqing,et al."Intervalley Г-X deformation potentials in III-V zincblende and si senic-conductors by Ab Inition pseudopotential calculations".Communications in Theoretical Physics 20.2(1993):159.
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