SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
质量分离低能离子束外延超薄硅单晶的初步研究
黄大定; 姚振钰; 任治璋; 王向明; 刘志凯; 秦复光
1993
Source Publication半导体学报
Volume14Issue:8Pages:509
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:198972
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20149
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
黄大定,姚振钰,任治璋,等. 质量分离低能离子束外延超薄硅单晶的初步研究[J]. 半导体学报,1993,14(8):509.
APA 黄大定,姚振钰,任治璋,王向明,刘志凯,&秦复光.(1993).质量分离低能离子束外延超薄硅单晶的初步研究.半导体学报,14(8),509.
MLA 黄大定,et al."质量分离低能离子束外延超薄硅单晶的初步研究".半导体学报 14.8(1993):509.
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