SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
锗离子注入硅单晶的非晶化及二次缺陷的研究
范缇文; 张敬平; Hemment P L F
1993
Source Publication半导体学报
Volume14Issue:12Pages:734
metadata_83中科院半导体所;英国Surrey大学
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:198974
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20147
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范缇文,张敬平,Hemment P L F. 锗离子注入硅单晶的非晶化及二次缺陷的研究[J]. 半导体学报,1993,14(12):734.
APA 范缇文,张敬平,&Hemment P L F.(1993).锗离子注入硅单晶的非晶化及二次缺陷的研究.半导体学报,14(12),734.
MLA 范缇文,et al."锗离子注入硅单晶的非晶化及二次缺陷的研究".半导体学报 14.12(1993):734.
Files in This Item:
File Name/Size DocType Version Access License
6180.pdf(144KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[范缇文]'s Articles
[张敬平]'s Articles
[Hemment P L F]'s Articles
Baidu academic
Similar articles in Baidu academic
[范缇文]'s Articles
[张敬平]'s Articles
[Hemment P L F]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[范缇文]'s Articles
[张敬平]'s Articles
[Hemment P L F]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.