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短周期(Ge)n (Si)n 应变超晶格电子结构的自洽赝势计算
范卫军; 顾宗权
1993
Source Publication半导体学报
Volume14Issue:2Pages:128
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization中国科学院基金,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:199047
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20121
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范卫军,顾宗权. 短周期(Ge)n (Si)n 应变超晶格电子结构的自洽赝势计算[J]. 半导体学报,1993,14(2):128.
APA 范卫军,&顾宗权.(1993).短周期(Ge)n (Si)n 应变超晶格电子结构的自洽赝势计算.半导体学报,14(2),128.
MLA 范卫军,et al."短周期(Ge)n (Si)n 应变超晶格电子结构的自洽赝势计算".半导体学报 14.2(1993):128.
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