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低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析
陈德勇; 朱龙德; 李晶; 熊飞克; 徐俊英; 万寿科; 梁骏吾
1993
Source Publication半导体学报
Volume14Issue:6Pages:345
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:199051
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20117
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈德勇,朱龙德,李晶,等. 低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析[J]. 半导体学报,1993,14(6):345.
APA 陈德勇.,朱龙德.,李晶.,熊飞克.,徐俊英.,...&梁骏吾.(1993).低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析.半导体学报,14(6),345.
MLA 陈德勇,et al."低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析".半导体学报 14.6(1993):345.
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