SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
a-Si∶H中光致亚稳缺陷产生的弛豫过程:HCR和DCR模型的实验检验
刘国胜; 孔光临
1993
Source Publication半导体学报
Volume14Issue:5Pages:325
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:199060
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20115
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘国胜,孔光临. a-Si∶H中光致亚稳缺陷产生的弛豫过程:HCR和DCR模型的实验检验[J]. 半导体学报,1993,14(5):325.
APA 刘国胜,&孔光临.(1993).a-Si∶H中光致亚稳缺陷产生的弛豫过程:HCR和DCR模型的实验检验.半导体学报,14(5),325.
MLA 刘国胜,et al."a-Si∶H中光致亚稳缺陷产生的弛豫过程:HCR和DCR模型的实验检验".半导体学报 14.5(1993):325.
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