Knowledge Management System Of Institute of Semiconductors,CAS
Si(112)高密勒指数面的理论研究 | |
张瑞勤; 吴汲安; 邢益荣 | |
1993 | |
Source Publication | 半导体学报
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Volume | 14Issue:9Pages:527 |
metadata_83 | 山东大学;中科院半导体所 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:199065 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20113 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 张瑞勤,吴汲安,邢益荣. Si(112)高密勒指数面的理论研究[J]. 半导体学报,1993,14(9):527. |
APA | 张瑞勤,吴汲安,&邢益荣.(1993).Si(112)高密勒指数面的理论研究.半导体学报,14(9),527. |
MLA | 张瑞勤,et al."Si(112)高密勒指数面的理论研究".半导体学报 14.9(1993):527. |
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