SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(112)高密勒指数面的理论研究
张瑞勤; 吴汲安; 邢益荣
1993
Source Publication半导体学报
Volume14Issue:9Pages:527
metadata_83山东大学;中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:199065
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20113
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张瑞勤,吴汲安,邢益荣. Si(112)高密勒指数面的理论研究[J]. 半导体学报,1993,14(9):527.
APA 张瑞勤,吴汲安,&邢益荣.(1993).Si(112)高密勒指数面的理论研究.半导体学报,14(9),527.
MLA 张瑞勤,et al."Si(112)高密勒指数面的理论研究".半导体学报 14.9(1993):527.
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