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InxGa(1-a)As的俄歇电子谱定量分析 | |
陈维德; 陈宗圭; 崔玉德 | |
1993 | |
Source Publication | 半导体学报
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Volume | 14Issue:7Pages:410 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体物理 |
Funding Organization | 国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20109 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 陈维德,陈宗圭,崔玉德. InxGa(1-a)As的俄歇电子谱定量分析[J]. 半导体学报,1993,14(7):410. |
APA | 陈维德,陈宗圭,&崔玉德.(1993).InxGa(1-a)As的俄歇电子谱定量分析.半导体学报,14(7),410. |
MLA | 陈维德,et al."InxGa(1-a)As的俄歇电子谱定量分析".半导体学报 14.7(1993):410. |
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6161.pdf(137KB) | 限制开放 | -- | Application Full Text |
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