SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InxGa(1-a)As的俄歇电子谱定量分析
陈维德; 陈宗圭; 崔玉德
1993
Source Publication半导体学报
Volume14Issue:7Pages:410
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20109
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,陈宗圭,崔玉德. InxGa(1-a)As的俄歇电子谱定量分析[J]. 半导体学报,1993,14(7):410.
APA 陈维德,陈宗圭,&崔玉德.(1993).InxGa(1-a)As的俄歇电子谱定量分析.半导体学报,14(7),410.
MLA 陈维德,et al."InxGa(1-a)As的俄歇电子谱定量分析".半导体学报 14.7(1993):410.
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