SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应
刘伟; 张耀辉; 江德生; 王若桢; 周均铭; 梅笑冰
1993
Source Publication半导体学报
Volume14Issue:8Pages:517
metadata_83中科院半导体所;北京师范大学;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:199076
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20107
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘伟,张耀辉,江德生,等. InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应[J]. 半导体学报,1993,14(8):517.
APA 刘伟,张耀辉,江德生,王若桢,周均铭,&梅笑冰.(1993).InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应.半导体学报,14(8),517.
MLA 刘伟,et al."InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应".半导体学报 14.8(1993):517.
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