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InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究 | |
张权生; 吕卉; 杜云; 马朝花; 吴荣汉; 高洪海; 高文智; 芦秀玲 | |
1993 | |
Source Publication | 半导体学报
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Volume | 14Issue:9Pages:562 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体器件 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:199078 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20105 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 张权生,吕卉,杜云,等. InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究[J]. 半导体学报,1993,14(9):562. |
APA | 张权生.,吕卉.,杜云.,马朝花.,吴荣汉.,...&芦秀玲.(1993).InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究.半导体学报,14(9),562. |
MLA | 张权生,et al."InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究".半导体学报 14.9(1993):562. |
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