SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究
张权生; 吕卉; 杜云; 马朝花; 吴荣汉; 高洪海; 高文智; 芦秀玲
1993
Source Publication半导体学报
Volume14Issue:9Pages:562
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:199078
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20105
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张权生,吕卉,杜云,等. InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究[J]. 半导体学报,1993,14(9):562.
APA 张权生.,吕卉.,杜云.,马朝花.,吴荣汉.,...&芦秀玲.(1993).InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究.半导体学报,14(9),562.
MLA 张权生,et al."InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究".半导体学报 14.9(1993):562.
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