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InGaAs/InP体材料和量了阱、超晶格材料的低压MOCVD生长及材料特性的测试分析
朱龙德; 李昌; 陈德勇; 熊飞克
1993
Source Publication半导体学报
Volume14Issue:4Pages:208
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:199079
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20103
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
朱龙德,李昌,陈德勇,等. InGaAs/InP体材料和量了阱、超晶格材料的低压MOCVD生长及材料特性的测试分析[J]. 半导体学报,1993,14(4):208.
APA 朱龙德,李昌,陈德勇,&熊飞克.(1993).InGaAs/InP体材料和量了阱、超晶格材料的低压MOCVD生长及材料特性的测试分析.半导体学报,14(4),208.
MLA 朱龙德,et al."InGaAs/InP体材料和量了阱、超晶格材料的低压MOCVD生长及材料特性的测试分析".半导体学报 14.4(1993):208.
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