SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
钛溅射和硅化钛形成在硅中引进深能级的研究
卢励吾; 周洁; 武国英
1993
Source Publication电子学报
Volume21Issue:8Pages:23
metadata_83中科院半导体所;北京大学
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:202904
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20087
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,周洁,武国英. 钛溅射和硅化钛形成在硅中引进深能级的研究[J]. 电子学报,1993,21(8):23.
APA 卢励吾,周洁,&武国英.(1993).钛溅射和硅化钛形成在硅中引进深能级的研究.电子学报,21(8),23.
MLA 卢励吾,et al."钛溅射和硅化钛形成在硅中引进深能级的研究".电子学报 21.8(1993):23.
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