SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
P-InP MIS结构界面陷阱的深能级研究
卢励吾; 周洁; 瞿伟; 张盛廉
1993
Source Publication电子学报
Volume21Issue:11Pages:72
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:203093
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20079
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,周洁,瞿伟,等. P-InP MIS结构界面陷阱的深能级研究[J]. 电子学报,1993,21(11):72.
APA 卢励吾,周洁,瞿伟,&张盛廉.(1993).P-InP MIS结构界面陷阱的深能级研究.电子学报,21(11),72.
MLA 卢励吾,et al."P-InP MIS结构界面陷阱的深能级研究".电子学报 21.11(1993):72.
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