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MOCVD生长的平面型InGaAs/InP PIN光电探测器件
杨志鸿; 王树堂; 曾靖; 朱龙德; 孙捷; 夏彩虹; 沈戎; 归强
1993
Source Publication红外与毫米波学报
Volume12Issue:2Pages:155
Abstract讨论了采了MOCVD技术生长的平面型InGaAs/InP PIN器件的光学特性及制备工艺。通过引入InP窗口层并制备合适的抗反射膜, 提高了器件的量子效率, 达到~90%, 采用平面型结构有可能改善器件的稳定性和可靠性。图3参5
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:207924
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20071
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨志鸿,王树堂,曾靖,等. MOCVD生长的平面型InGaAs/InP PIN光电探测器件[J]. 红外与毫米波学报,1993,12(2):155.
APA 杨志鸿.,王树堂.,曾靖.,朱龙德.,孙捷.,...&归强.(1993).MOCVD生长的平面型InGaAs/InP PIN光电探测器件.红外与毫米波学报,12(2),155.
MLA 杨志鸿,et al."MOCVD生长的平面型InGaAs/InP PIN光电探测器件".红外与毫米波学报 12.2(1993):155.
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