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GaAs中4d过渡杂质Mo与Pd的光电行为
周洁; 马红; 卢励吾; 韩志勇
1993
Source Publication红外与毫米波学报
Volume12Issue:2Pages:135
Abstract4d过渡杂质Mo、Pd在GaAs中分别引入E(0.42eV)、H(0.61eV)和E(0.66eV)、H(0.69eV)等能级。根据过渡杂质Mo和Pd在GaAs中的光电行为, 推测这些杂质在GaAs中不起有效复合中心的作用。图4参3
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:207927
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20069
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周洁,马红,卢励吾,等. GaAs中4d过渡杂质Mo与Pd的光电行为[J]. 红外与毫米波学报,1993,12(2):135.
APA 周洁,马红,卢励吾,&韩志勇.(1993).GaAs中4d过渡杂质Mo与Pd的光电行为.红外与毫米波学报,12(2),135.
MLA 周洁,et al."GaAs中4d过渡杂质Mo与Pd的光电行为".红外与毫米波学报 12.2(1993):135.
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