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分子束外延生长的赝配高电子迁移率晶体管结构中深能级的研究
卢励吾; 周洁; 梁基本; 孔梅影
1993
Source Publication物理学报
Volume42Issue:5Pages:817
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:217662
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20055
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,周洁,梁基本,等. 分子束外延生长的赝配高电子迁移率晶体管结构中深能级的研究[J]. 物理学报,1993,42(5):817.
APA 卢励吾,周洁,梁基本,&孔梅影.(1993).分子束外延生长的赝配高电子迁移率晶体管结构中深能级的研究.物理学报,42(5),817.
MLA 卢励吾,et al."分子束外延生长的赝配高电子迁移率晶体管结构中深能级的研究".物理学报 42.5(1993):817.
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