SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
单片集成式反应离子刻蚀沟槽耦合腔AlGaAs/GaAs激光器
张石桥; 谭叔明; 庄婉如; 杨培生; 陈季英
1993
Source Publication中国激光
Volume20Issue:3Pages:161
metadata_83太原工业大学;北方交通大学;中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:221727
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20043
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张石桥,谭叔明,庄婉如,等. 单片集成式反应离子刻蚀沟槽耦合腔AlGaAs/GaAs激光器[J]. 中国激光,1993,20(3):161.
APA 张石桥,谭叔明,庄婉如,杨培生,&陈季英.(1993).单片集成式反应离子刻蚀沟槽耦合腔AlGaAs/GaAs激光器.中国激光,20(3),161.
MLA 张石桥,et al."单片集成式反应离子刻蚀沟槽耦合腔AlGaAs/GaAs激光器".中国激光 20.3(1993):161.
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