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Ar+离子汪入对Ge/GaAs(100)异质结能带偏离影响的XPS研究
徐世红; 刘先明; 朱警生; 麻茂生; 张裕恒; 徐彭寿; 许振嘉
1993
Source Publication中国科学技术大学学报
Volume23Issue:4Pages:442
metadata_83中国科学技术大学;中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:222279
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20041
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐世红,刘先明,朱警生,等. Ar+离子汪入对Ge/GaAs(100)异质结能带偏离影响的XPS研究[J]. 中国科学技术大学学报,1993,23(4):442.
APA 徐世红.,刘先明.,朱警生.,麻茂生.,张裕恒.,...&许振嘉.(1993).Ar+离子汪入对Ge/GaAs(100)异质结能带偏离影响的XPS研究.中国科学技术大学学报,23(4),442.
MLA 徐世红,et al."Ar+离子汪入对Ge/GaAs(100)异质结能带偏离影响的XPS研究".中国科学技术大学学报 23.4(1993):442.
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