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用MOCVD在非平面衬底上生长的量子阱、量子线及其光学性质
钱毅; 郑婉华; 郑联喜; 张霞; 胡雄伟; 陈良惠; 王启明
1994
Source Publication半导体学报
Volume15Issue:4Pages:289
metadata_83中科院半导体所;国家光电子工艺中心
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:230028
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20037
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
钱毅,郑婉华,郑联喜,等. 用MOCVD在非平面衬底上生长的量子阱、量子线及其光学性质[J]. 半导体学报,1994,15(4):289.
APA 钱毅.,郑婉华.,郑联喜.,张霞.,胡雄伟.,...&王启明.(1994).用MOCVD在非平面衬底上生长的量子阱、量子线及其光学性质.半导体学报,15(4),289.
MLA 钱毅,et al."用MOCVD在非平面衬底上生长的量子阱、量子线及其光学性质".半导体学报 15.4(1994):289.
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