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氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响
丁孙安; 许振嘉
1994
Source Publication半导体学报
Volume15Issue:6Pages:367
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:230049
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20031
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
丁孙安,许振嘉. 氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响[J]. 半导体学报,1994,15(6):367.
APA 丁孙安,&许振嘉.(1994).氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响.半导体学报,15(6),367.
MLA 丁孙安,et al."氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响".半导体学报 15.6(1994):367.
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