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氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响 | |
丁孙安; 许振嘉 | |
1994 | |
Source Publication | 半导体学报
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Volume | 15Issue:6Pages:367 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:230049 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/20031 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 丁孙安,许振嘉. 氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响[J]. 半导体学报,1994,15(6):367. |
APA | 丁孙安,&许振嘉.(1994).氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响.半导体学报,15(6),367. |
MLA | 丁孙安,et al."氢等离子体对(Pt及其硅化物)/Si界面的杂质/缺陷态和势垒的影响".半导体学报 15.6(1994):367. |
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