SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
气态源分子束外延(AlGa)InP和GaInP/AlInP多量子阱材料
袁瑞霞; 阎春辉; 国红熙; 李晓兵; 朱世荣; 李灵肖; 曾一平; 孔梅影
1994
Source Publication半导体学报
Volume15Issue:5Pages:312
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:230050
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20029
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
袁瑞霞,阎春辉,国红熙,等. 气态源分子束外延(AlGa)InP和GaInP/AlInP多量子阱材料[J]. 半导体学报,1994,15(5):312.
APA 袁瑞霞.,阎春辉.,国红熙.,李晓兵.,朱世荣.,...&孔梅影.(1994).气态源分子束外延(AlGa)InP和GaInP/AlInP多量子阱材料.半导体学报,15(5),312.
MLA 袁瑞霞,et al."气态源分子束外延(AlGa)InP和GaInP/AlInP多量子阱材料".半导体学报 15.5(1994):312.
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