SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
利用CBE技术在Si衬底上生长GaAs薄膜
邢益荣; Joyce T B; Kiely C J; Goodhew P J
1994
Source Publication半导体学报
Volume15Issue:4Pages:229
metadata_83中科院半导体所;英国利物浦大学
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:230057
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20025
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邢益荣,Joyce T B,Kiely C J,等. 利用CBE技术在Si衬底上生长GaAs薄膜[J]. 半导体学报,1994,15(4):229.
APA 邢益荣,Joyce T B,Kiely C J,&Goodhew P J.(1994).利用CBE技术在Si衬底上生长GaAs薄膜.半导体学报,15(4),229.
MLA 邢益荣,et al."利用CBE技术在Si衬底上生长GaAs薄膜".半导体学报 15.4(1994):229.
Files in This Item:
File Name/Size DocType Version Access License
6114.pdf(251KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[邢益荣]'s Articles
[Joyce T B]'s Articles
[Kiely C J]'s Articles
Baidu academic
Similar articles in Baidu academic
[邢益荣]'s Articles
[Joyce T B]'s Articles
[Kiely C J]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[邢益荣]'s Articles
[Joyce T B]'s Articles
[Kiely C J]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.