SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
进一步提高氢离子敏场效应晶体管稳定性的研究
陈克铭; 李国花; 陈朗星; 朱燕
1994
Source Publication半导体学报
Volume15Issue:6Pages:383
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:230065
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20023
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈克铭,李国花,陈朗星,等. 进一步提高氢离子敏场效应晶体管稳定性的研究[J]. 半导体学报,1994,15(6):383.
APA 陈克铭,李国花,陈朗星,&朱燕.(1994).进一步提高氢离子敏场效应晶体管稳定性的研究.半导体学报,15(6),383.
MLA 陈克铭,et al."进一步提高氢离子敏场效应晶体管稳定性的研究".半导体学报 15.6(1994):383.
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