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高迁移率Si/Si(0.7)Ge(0.3)/Si调帛掺杂异质结构的生长和输运性质
若琏; 刘建林; 郑有Dou; 李海峰
1994
Source Publication半导体学报
Volume15Issue:7Pages:501
metadata_83南京大学物理系;中科院半导体所
Subject Area半导体材料
Funding Organization863计划,国家攀登计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:230077
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20021
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
若琏,刘建林,郑有Dou,等. 高迁移率Si/Si(0.7)Ge(0.3)/Si调帛掺杂异质结构的生长和输运性质[J]. 半导体学报,1994,15(7):501.
APA 若琏,刘建林,郑有Dou,&李海峰.(1994).高迁移率Si/Si(0.7)Ge(0.3)/Si调帛掺杂异质结构的生长和输运性质.半导体学报,15(7),501.
MLA 若琏,et al."高迁移率Si/Si(0.7)Ge(0.3)/Si调帛掺杂异质结构的生长和输运性质".半导体学报 15.7(1994):501.
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