SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE生长的PM-HEMT结构中深电子陷阱及其钝化/消除
卢励吾; 周洁; 梁基本; 孔梅影
1994
Source Publication半导体学报
Volume15Issue:12Pages:826
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:230117
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20003
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,周洁,梁基本,等. MBE生长的PM-HEMT结构中深电子陷阱及其钝化/消除[J]. 半导体学报,1994,15(12):826.
APA 卢励吾,周洁,梁基本,&孔梅影.(1994).MBE生长的PM-HEMT结构中深电子陷阱及其钝化/消除.半导体学报,15(12),826.
MLA 卢励吾,et al."MBE生长的PM-HEMT结构中深电子陷阱及其钝化/消除".半导体学报 15.12(1994):826.
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