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InGaAs-GaAs短周期应变层超晶格调制反射光谱中的Franz-Keldysh振荡
刘伟; 江德生; 王若桢; 周钧铭; 王凤莲
1994
Source Publication半导体学报
Volume15Issue:2Pages:83
Abstract在p-i-n结构的 InGaAs-GaAs应变层短周期超晶格的调制光反射谱中观察并确认了超晶格微带电子的Franz-Keldysh振荡, 通过对Franz-Keldysh振荡的分析,推算出超晶格区内建电场大小;讨论了内建电场对超晶格微带电子的影响,最后指出Franz-Keldysh振荡可以作为检验短周期超晶格样品质量的一种手段。
metadata_83中科院半导体所;北京师范大学物理系;中科院物理所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:230122
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19999
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘伟,江德生,王若桢,等. InGaAs-GaAs短周期应变层超晶格调制反射光谱中的Franz-Keldysh振荡[J]. 半导体学报,1994,15(2):83.
APA 刘伟,江德生,王若桢,周钧铭,&王凤莲.(1994).InGaAs-GaAs短周期应变层超晶格调制反射光谱中的Franz-Keldysh振荡.半导体学报,15(2),83.
MLA 刘伟,et al."InGaAs-GaAs短周期应变层超晶格调制反射光谱中的Franz-Keldysh振荡".半导体学报 15.2(1994):83.
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