SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs双异质结光波导开关内带隙的注入载流子感生变化
王德煌; 王威礼; 庄婉如; 林雯华
1994
Source Publication半导体学报
Volume15Issue:7Pages:455
metadata_83北京大学物理系;中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:230133
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19993
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王德煌,王威礼,庄婉如,等. GaAs/GaAlAs双异质结光波导开关内带隙的注入载流子感生变化[J]. 半导体学报,1994,15(7):455.
APA 王德煌,王威礼,庄婉如,&林雯华.(1994).GaAs/GaAlAs双异质结光波导开关内带隙的注入载流子感生变化.半导体学报,15(7),455.
MLA 王德煌,et al."GaAs/GaAlAs双异质结光波导开关内带隙的注入载流子感生变化".半导体学报 15.7(1994):455.
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