SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaP界面的X射线掠入射衍射分析
崔树范; 吴兰生; 王观明; 麦振洪; 王春艳; 王玉田; 李梅; 葛中久
1994
Source Publication半导体学报
Volume15Issue:2Pages:119
Abstract用掠入射全反射X射线衍射,结合常规X射线衍射,对GaAs/GaP应变层界面进行了研究,给出了界面失配度、薄膜晶胞的畸变和界面弛豫等结构参数。结果表明掠入射衍射(GID)是测定半导体薄外延膜界面结构的有效工具。
metadata_83中科院物理所;中科院半导体所;中科院长春物理所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:230135
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19991
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
崔树范,吴兰生,王观明,等. GaAs/GaP界面的X射线掠入射衍射分析[J]. 半导体学报,1994,15(2):119.
APA 崔树范.,吴兰生.,王观明.,麦振洪.,王春艳.,...&葛中久.(1994).GaAs/GaP界面的X射线掠入射衍射分析.半导体学报,15(2),119.
MLA 崔树范,et al."GaAs/GaP界面的X射线掠入射衍射分析".半导体学报 15.2(1994):119.
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