SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs单量子阱中界面粗糙度散射
王杏华; 郑厚植; 余涛; Reino Laiho
1994
Source Publication半导体学报
Volume15Issue:5Pages:329
metadata_83中科院半导体所;芬兰图尔库大学
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:230138
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19989
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王杏华,郑厚植,余涛,等. GaAs/AlGaAs单量子阱中界面粗糙度散射[J]. 半导体学报,1994,15(5):329.
APA 王杏华,郑厚植,余涛,&Reino Laiho.(1994).GaAs/AlGaAs单量子阱中界面粗糙度散射.半导体学报,15(5),329.
MLA 王杏华,et al."GaAs/AlGaAs单量子阱中界面粗糙度散射".半导体学报 15.5(1994):329.
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