SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs-AlxGa(1-x)As异质结中二维热电子的负磁阻效应
程文超; 朱景兵; 李月霞; 宋爱民; 郑厚植
1994
Source Publication半导体学报
Volume15Issue:8Pages:577
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家攀登计划
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19985
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
程文超,朱景兵,李月霞,等. GaAs-AlxGa(1-x)As异质结中二维热电子的负磁阻效应[J]. 半导体学报,1994,15(8):577.
APA 程文超,朱景兵,李月霞,宋爱民,&郑厚植.(1994).GaAs-AlxGa(1-x)As异质结中二维热电子的负磁阻效应.半导体学报,15(8),577.
MLA 程文超,et al."GaAs-AlxGa(1-x)As异质结中二维热电子的负磁阻效应".半导体学报 15.8(1994):577.
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