SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/Al(0.33)Ga(0.67)As短周期超晶格中能带不连续性随压力的变化
刘振先; 李国华; 韩和相; 汪兆平
1994
Source Publication半导体学报
Volume15Issue:3Pages:163
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:230141
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19983
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘振先,李国华,韩和相,等. GaAs/Al(0.33)Ga(0.67)As短周期超晶格中能带不连续性随压力的变化[J]. 半导体学报,1994,15(3):163.
APA 刘振先,李国华,韩和相,&汪兆平.(1994).GaAs/Al(0.33)Ga(0.67)As短周期超晶格中能带不连续性随压力的变化.半导体学报,15(3),163.
MLA 刘振先,et al."GaAs/Al(0.33)Ga(0.67)As短周期超晶格中能带不连续性随压力的变化".半导体学报 15.3(1994):163.
Files in This Item:
File Name/Size DocType Version Access License
6093.pdf(490KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[刘振先]'s Articles
[李国华]'s Articles
[韩和相]'s Articles
Baidu academic
Similar articles in Baidu academic
[刘振先]'s Articles
[李国华]'s Articles
[韩和相]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[刘振先]'s Articles
[李国华]'s Articles
[韩和相]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.