SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/Al(0.4)Ga(0.6)As多量子肼红外探测器光吸收计算
范卫军; 夏建白
1994
Source Publication半导体学报
Volume15Issue:10Pages:655
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:230142
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19981
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范卫军,夏建白. GaAs/Al(0.4)Ga(0.6)As多量子肼红外探测器光吸收计算[J]. 半导体学报,1994,15(10):655.
APA 范卫军,&夏建白.(1994).GaAs/Al(0.4)Ga(0.6)As多量子肼红外探测器光吸收计算.半导体学报,15(10),655.
MLA 范卫军,et al."GaAs/Al(0.4)Ga(0.6)As多量子肼红外探测器光吸收计算".半导体学报 15.10(1994):655.
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