SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs双量子阱中量子相干特性的研究
王杏华; 郑厚植; 李承芳; 刘剑; 杨小平; 余琦; Reino Laiho
1994
Source Publication半导体学报
Volume15Issue:10Pages:711
metadata_83中科院半导体所;芬兰图尔库大学
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:230143
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19979
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王杏华,郑厚植,李承芳,等. GaAs/AlGaAs双量子阱中量子相干特性的研究[J]. 半导体学报,1994,15(10):711.
APA 王杏华.,郑厚植.,李承芳.,刘剑.,杨小平.,...&Reino Laiho.(1994).GaAs/AlGaAs双量子阱中量子相干特性的研究.半导体学报,15(10),711.
MLA 王杏华,et al."GaAs/AlGaAs双量子阱中量子相干特性的研究".半导体学报 15.10(1994):711.
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