EL2光淬灭过程中光电导增强现象原因新探

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	EL2光淬灭过程中光电导增强现象原因新探
	徐波; 王占国; 万寿科; 孙虹; 张辉; 杨锡权; 林兰英; Koutzarov I P
	1994
Source Publication	半导体学报
Volume	15 Issue:5 Pages:322
metadata_83	中科院半导体所;中山大学
Subject Area	半导体材料
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:230146
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19977
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	徐波,王占国,万寿科,等. EL2光淬灭过程中光电导增强现象原因新探[J]. 半导体学报,1994,15(5):322.
APA	徐波.,王占国.,万寿科.,孙虹.,张辉.,...&Koutzarov I P.(1994).EL2光淬灭过程中光电导增强现象原因新探.半导体学报,15(5),322.
MLA	徐波,et al."EL2光淬灭过程中光电导增强现象原因新探".半导体学报 15.5(1994):322.

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