SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
EL2光淬灭过程中光电导增强现象原因新探
徐波; 王占国; 万寿科; 孙虹; 张辉; 杨锡权; 林兰英; Koutzarov I P
1994
Source Publication半导体学报
Volume15Issue:5Pages:322
metadata_83中科院半导体所;中山大学
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:230146
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19977
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐波,王占国,万寿科,等. EL2光淬灭过程中光电导增强现象原因新探[J]. 半导体学报,1994,15(5):322.
APA 徐波.,王占国.,万寿科.,孙虹.,张辉.,...&Koutzarov I P.(1994).EL2光淬灭过程中光电导增强现象原因新探.半导体学报,15(5),322.
MLA 徐波,et al."EL2光淬灭过程中光电导增强现象原因新探".半导体学报 15.5(1994):322.
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