SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
CoSi2薄膜形成过程中的反应机制
何杰; 顾诠; 陈维德; 许振嘉
1994
Source Publication半导体学报
Volume15Issue:8Pages:544
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19973
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
何杰,顾诠,陈维德,等. CoSi2薄膜形成过程中的反应机制[J]. 半导体学报,1994,15(8):544.
APA 何杰,顾诠,陈维德,&许振嘉.(1994).CoSi2薄膜形成过程中的反应机制.半导体学报,15(8),544.
MLA 何杰,et al."CoSi2薄膜形成过程中的反应机制".半导体学报 15.8(1994):544.
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