Knowledge Management System Of Institute of Semiconductors,CAS
CoSi2可望成为GaAs MESFET自对准工艺中的栅材料 | |
金高龙; 陈维德; 许振嘉 | |
1994 | |
Source Publication | 半导体学报
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Volume | 15Issue:8Pages:518 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19971 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 金高龙,陈维德,许振嘉. CoSi2可望成为GaAs MESFET自对准工艺中的栅材料[J]. 半导体学报,1994,15(8):518. |
APA | 金高龙,陈维德,&许振嘉.(1994).CoSi2可望成为GaAs MESFET自对准工艺中的栅材料.半导体学报,15(8),518. |
MLA | 金高龙,et al."CoSi2可望成为GaAs MESFET自对准工艺中的栅材料".半导体学报 15.8(1994):518. |
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