SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
(Pt及其硅化物)/硅界面的深能级研究
丁孙安; 许振嘉
1994
Source Publication半导体学报
Volume15Issue:3Pages:149
Abstract利用深能级瞬态谱(DLTS), 详细研究了(Pt及其硅化物)/Si界面上存在的各种深能级缺陷中心,并分析了引起这些缺陷的原因及与界面原子结构的关系。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:230157
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19969
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
丁孙安,许振嘉. (Pt及其硅化物)/硅界面的深能级研究[J]. 半导体学报,1994,15(3):149.
APA 丁孙安,&许振嘉.(1994).(Pt及其硅化物)/硅界面的深能级研究.半导体学报,15(3),149.
MLA 丁孙安,et al."(Pt及其硅化物)/硅界面的深能级研究".半导体学报 15.3(1994):149.
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