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Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR
Ma Zhenyu; Wang Qiyuan; Zan Yude; Cai Tianhai; Yu Yuanhuan; Lin Lanying
1994
Source Publication半导体学报
Volume15Issue:3Pages:217
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:230158
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19967
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ma Zhenyu,Wang Qiyuan,Zan Yude,et al. Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR[J]. 半导体学报,1994,15(3):217.
APA Ma Zhenyu,Wang Qiyuan,Zan Yude,Cai Tianhai,Yu Yuanhuan,&Lin Lanying.(1994).Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR.半导体学报,15(3),217.
MLA Ma Zhenyu,et al."Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR".半导体学报 15.3(1994):217.
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