Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy

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	Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy
	Yang Guowen; Xu Junying; Xiao Jianwei; Xu Zuntu
	1994
Source Publication	半导体学报
Volume	15 Issue:8 Pages:565
metadata_83	中科院半导体所
Subject Area	光电子学
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:230159
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19965
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Yang Guowen,Xu Junying,Xiao Jianwei,et al. Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy[J]. 半导体学报,1994,15(8):565.
APA	Yang Guowen,Xu Junying,Xiao Jianwei,&Xu Zuntu.(1994).Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy.半导体学报,15(8),565.
MLA	Yang Guowen,et al."Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy".半导体学报 15.8(1994):565.

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