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Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy
Yang Guowen; Xu Junying; Xiao Jianwei; Xu Zuntu
1994
Source Publication半导体学报
Volume15Issue:8Pages:565
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:230159
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19965
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yang Guowen,Xu Junying,Xiao Jianwei,et al. Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy[J]. 半导体学报,1994,15(8):565.
APA Yang Guowen,Xu Junying,Xiao Jianwei,&Xu Zuntu.(1994).Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy.半导体学报,15(8),565.
MLA Yang Guowen,et al."Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy".半导体学报 15.8(1994):565.
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