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Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy | |
Yang Guowen; Xu Junying; Xiao Jianwei; Xu Zuntu | |
1994 | |
Source Publication | 半导体学报
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Volume | 15Issue:8Pages:565 |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:230159 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19965 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Yang Guowen,Xu Junying,Xiao Jianwei,et al. Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy[J]. 半导体学报,1994,15(8):565. |
APA | Yang Guowen,Xu Junying,Xiao Jianwei,&Xu Zuntu.(1994).Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy.半导体学报,15(8),565. |
MLA | Yang Guowen,et al."Extremely low threshold current density strained InGaAs/AlGaAs quantum well lasers by molecular beam epitaxy".半导体学报 15.8(1994):565. |
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